国家/地区 Korea（3） China（2）
关键词 SCHOTTKY BARRIER（8）
出版物 ACS APPLIED MATERIALS INTERFACES（8）
出版时间 2018（2） 2019（2）
机构
作者 HOU LL（2） SONG W（2） WARNER JH（2） ZHANG QY（2）

Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer

ACS APPLIED MATERIALS INTERFACES

YOON HH, SONG W, JUNG S, KIM J, MO K, CHOI G, JEONG HY, LEE JH, PARK K

Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction

ACS APPLIED MATERIALS INTERFACES

LIU XZ, ZHOU Q, LUO S, DU HW, CAO ZS, PENG XY, FENG WL, SHEN J, WEI DP

Bias- and Gate-Tunable Gas Sensor Response Originating from Modulation in the Schottky Barrier Height of a Graphene/MoS2 van der Waals Heterojunction

ACS APPLIED MATERIALS INTERFACES

TABATA H, SATO Y, OI K, KUBO O, KATAYAMA M

High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene-MoS2 Heterojunctions

ACS APPLIED MATERIALS INTERFACES

HUANG HF, XU WS, CHEN TX, CHANG RJ, SHENG YW, ZHANG QY, HOU LL, WARNER JH

Ambipolar Graphene-Quantum Dot Hybrid Vertical Photodetector with a Graphene Electrode

ACS APPLIED MATERIALS INTERFACES

CHE YL, ZHANG YT, CAO XL, ZHANG HT, SONG XX, CAO MX, YU Y, DAI HT, YANG JB, ZHANG GZ, YAO JQ

Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor

ACS APPLIED MATERIALS INTERFACES

MILLS EM, MIN BK, KIM SK, KIM SJ, KANG MA, SONG W, MYUNG S, LIM J, AN KS, JUNG J, KIM S

Pristine Graphene Insertion at the Metal/Semiconductor Interface to Minimize Metal-Induced Gap States

ACS APPLIED MATERIALS INTERFACES

PARK JH, YANG SJ, CHOI CW, CHOI SY, KIM CJ

Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS2 Semiconductor Monolayers

ACS APPLIED MATERIALS INTERFACES

ZHANG QY, HOU LL, SHAUTSOVA V, WARNER JH