国家/地区 Japan（4）
关键词 BILAYER GRAPHENE（2） ELECTRONIC STRUCTUR.（2） FET（2）
出版物 APPLIED PHYSICS EXPRESS（4）
出版时间 2020（2）
机构 UNIV TSUKUBA（3）
作者 GAO YL（4）

Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors

APPLIED PHYSICS EXPRESS

OKADA S, MARUYAMA M, GAO YL

Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors

APPLIED PHYSICS EXPRESS

GAO YL, MARUYAMA M, OKADA S

Electrostatic potential barrier for electron emission at graphene edges induced by the nearly free electron states

APPLIED PHYSICS EXPRESS

GAO YL, OKADA S

Carrier distribution control in bilayer graphene under a perpendicular electric field by interlayer stacking arrangements

APPLIED PHYSICS EXPRESS

GAO YL, OKADA S