国家/地区 Usa（20）
关键词 GRAPHENE（3） ELECTRON BEAM EFFEC.（2）
出版物 APPLIED PHYSICS LETTERS（20）
出版时间 2009（4） 2013（4） 2007（2） 2008（2） 2012（2） 2015（2）
机构 UNIV CALIF R.（15） RENSSELAER P.（3）
作者 BALANDIN AA（20）

Specific heat of twisted bilayer graphene: Engineering phonons by atomic plane rotations

APPLIED PHYSICS LETTERS

NIKA DL, COCEMASOV AI, BALANDIN AA

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

APPLIED PHYSICS LETTERS

MURAVIEV AV, RUMYANTSEV SL, LIU G, BALANDIN AA, KNAP W, SHUR MS

The effect of a transverse magnetic field on 1/f noise in graphene

APPLIED PHYSICS LETTERS

RUMYANTSEV SL, COQUILLAT D, RIBEIRO R, GOIRAN M, KNAP W, SHUR MS, BALANDIN AA, LEVINSHTEIN ME

Reduction of 1/f noise in graphene after electron-beam irradiation

APPLIED PHYSICS LETTERS

HOSSAIN MZ, RUMYANTSEV S, SHUR MS, BALANDIN AA

Origin of 1/f noise in graphene multilayers: Surface vs. volume

APPLIED PHYSICS LETTERS

LIU GX, RUMYANTSEV S, SHUR MS, BALANDIN AA

Thermal properties of the hybrid graphene-metal nano-micro-composites: Applications in thermal interface materials

APPLIED PHYSICS LETTERS

GOYAL V, BALANDIN AA

Graphene thickness-graded transistors with reduced electronic noise

APPLIED PHYSICS LETTERS

LIU GX, RUMYANTSEV S, SHUR M, BALANDIN AA

Observation of the memory steps in graphene at elevated temperatures

APPLIED PHYSICS LETTERS

RUMYANTSEV SL, LIU GX, SHUR MS, BALANDIN AA

Response to "Comment on 'Modification of graphene properties due to electron-beam irradiation' " [Appl. Phys. Lett. 95, 246101(2009)]

APPLIED PHYSICS LETTERS

TEWELDEBRHAN D, BALANDIN AA

Low-frequency electronic noise in the double-gate single-layer graphene transistors

APPLIED PHYSICS LETTERS

LIU G, STILLMAN W, RUMYANTSEV S, SHAO Q, SHUR M, BALANDIN AA