国家/地区 India（2）
关键词
出版物 APPLIED PHYSICS LETTERS（3）
出版时间
机构 INDIAN INST .（2）
作者 BHAT N（3）

Optimization of HfO2 films for high transconductance back gated graphene transistors

APPLIED PHYSICS LETTERS

GANAPATHI KL, BHAT N, MOHAN S

High field carrier transport in graphene: Insights from fast current transient

APPLIED PHYSICS LETTERS

MAJUMDAR K, KALLATT S, BHAT N

Intrinsic limits of subthreshold slope in biased bilayer graphene transistor

APPLIED PHYSICS LETTERS

MAJUMDAR K, MURALI KVRM, BHAT N, LIN YM