国家/地区 Germany（7）
关键词
出版物 APPLIED PHYSICS LETTERS（7）
出版时间 2009（2） 2011（2）
机构 MAX PLANCK INST FESTKORPERFORSCH（7）
作者 STARKE U（4） BURGHARD M（3） KERN K（3） ZAKHAROV AA（3）
LEE EJH（2） RIEDL C（2）

Bipolar gating of epitaxial graphene by intercalation of Ge

APPLIED PHYSICS LETTERS

BARINGHAUS J, STOHR A, FORTI S, KRASNIKOV SA, ZAKHAROV AA, STARKE U, TEGENKAMP C

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

APPLIED PHYSICS LETTERS

COLETTI C, EMTSEV KV, ZAKHAROV AA, OUISSE T, CHAUSSENDE D, STARKE U

Polymer-electrolyte gated graphene transistors for analog and digital phase detection

APPLIED PHYSICS LETTERS

SAGAR A, BALASUBRAMANIAN K, BURGHARD M, KERN K, SORDAN R

Gate dependent photocurrents at a graphene p-n junction

APPLIED PHYSICS LETTERS

PETERS EC, LEE EJH, BURGHARD M, KERN K

Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

APPLIED PHYSICS LETTERS

ALTEMIMY A, RIEDL C, STARKE U

Noninvasive metal contacts in chemically derived graphene devices

APPLIED PHYSICS LETTERS

SUNDARAM RS, GOMEZNAVARRO C, LEE EJH, BURGHARD M, KERN K

Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

APPLIED PHYSICS LETTERS

RIEDL C, ZAKHAROV AA, STARKE U