国家/地区 Korea（9）
关键词
出版物 APPLIED PHYSICS LETTERS（9）
出版时间 2011（4） 2012（2）
机构 DONGGUK UNIV.（2） KOREA ADV IN.（2）
作者 SEO S（9）

Nanoscale topographical replication of graphene architecture by artificial DNA nanostructures

APPLIED PHYSICS LETTERS

MOON Y, SHIN J, SEO S, PARK J, DUGASANI SR, WOO SH, PARK T, PARK SH, AHN JR

Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

APPLIED PHYSICS LETTERS

LEE S, SONG EB, KIM SM, LEE Y, SEO DH, SEO S, WANG KL

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

APPLIED PHYSICS LETTERS

LEE S, SONG EB, KIM S, SEO DH, SEO S, KANG TW, WANG KL

Probing nanoscale conductance of monolayer graphene under pressure

APPLIED PHYSICS LETTERS

KWON S, CHOI S, CHUNG HJ, YANG H, SEO S, JHI SH, PARK JY

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

APPLIED PHYSICS LETTERS

LEE JK, CHUNG HJ, HEO J, SEO S, CHO IH, KWON HI, LEE JH

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH

Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer

APPLIED PHYSICS LETTERS

SHIN WC, SEO S, CHO BJ

The interlayer screening effect of graphene sheets investigated by Kelvin probe force microscopy

APPLIED PHYSICS LETTERS

LEE NJ, YOO JW, CHOI YJ, KANG CJ, JEON DY, KIM DC, SEO S, CHUNG HJ

Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors

APPLIED PHYSICS LETTERS

DU H, KIM T, SHIN S, KIM D, KIM H, SUNG JH, LEE MJ, SEO DH, LEE SW, JO MH, SEO S