国家/地区 Korea（3）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2011（4）
机构
作者 CHUNG HJ（4）

Robust bi-stable memory operation in single-layer graphene ferroelectric memory

APPLIED PHYSICS LETTERS

SONG EB, LIAN B, KIM SM, LEE S, CHUNG TK, WANG MS, ZENG CF, XU GY, WONG K, ZHOU Y, RASOOL HI, SEO DH, CHUNG HJ, HEO J, SEO S, WANG KL

Probing nanoscale conductance of monolayer graphene under pressure

APPLIED PHYSICS LETTERS

KWON S, CHOI S, CHUNG HJ, YANG H, SEO S, JHI SH, PARK JY

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

APPLIED PHYSICS LETTERS

LEE JK, CHUNG HJ, HEO J, SEO S, CHO IH, KWON HI, LEE JH

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH