国家/地区 India（4） Italy（3） Usa（2）
关键词 GRAPHENE（12）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（12）
出版时间 2013（12）
机构 INDIAN INST .（4） UNIV BOLOGNA（2）
作者 BHATTACHARYA.（4） MAHAPATRA S（4） VERMA R（4） BACCARANI G（2）
DI LECCE V（2） GNANI E（2） GNUDI A（2） GRASSI R（2）
REGGIANI S（2）

Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson Effect

IEEE TRANSACTIONS ON ELECTRON DEVICES

VERMA R, BHATTACHARYA S, MAHAPATRA S

Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene Sheet

IEEE TRANSACTIONS ON ELECTRON DEVICES

VERMA R, BHATTACHARYA S, MAHAPATRA S

Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

LIU WJ, SUN XW, TRAN XA, FANG Z, WANG ZR, WANG F, WU L, ZHANG JF, WEI J, ZHU HL, YU HY

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

HU GX, HU SY, LIU R, WANG LL, ZHOU X, TANG TA

Thermoelectric Performance of a Single-Layer Graphene Sheet for Energy Harvesting

IEEE TRANSACTIONS ON ELECTRON DEVICES

VERMA R, BHATTACHARYA S, MAHAPATRA S

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZHAO P, FEENSTRA RM, GU G, JENA D

Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

FIORI G, BRUZZONE S, IANNACCONE G

Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating Effect

IEEE TRANSACTIONS ON ELECTRON DEVICES

VERMA R, BHATTACHARYA S, MAHAPATRA S