国家/地区 China（2）
关键词 GRAPHENE ELECTRODE（3）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（3）
出版时间
机构
作者

Hole-Collecting Treated Graphene Layer and PTB7:PC71 BM-Based Bulk-Heterojunction OPV With Improved Carrier Collection and Photovoltaic Efficiency

IEEE TRANSACTIONS ON ELECTRON DEVICES

MAITY S, THOMAS T

Highly Transparent Dysprosium Oxide-Based RRAM With Multilayer Graphene Electrode for Low-Power Nonvolatile Memory Application

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZHAO HB, TU HL, WEI F, DU J

A Highly Sensitive Flexible Pressure Sensor Based on Inter-Comb Structured Graphene Electrodes

IEEE TRANSACTIONS ON ELECTRON DEVICES

LU SL, NIE TC, LI Y, LI YY, YAO Z, KIM NY, LI SD