国家/地区
关键词 GRAPHENE FET GFET（3）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（3）
出版时间 2015（3）
机构
作者

Resistance-Based Approach for Drain Current Modeling in Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

JAIN S, DUTTA AK

Optimization of a Compact I-V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration

IEEE TRANSACTIONS ON ELECTRON DEVICES

IANNAZZO M, LO MUZZO V, RODRIGUEZ S, PANDEY H, RUSU A, LEMME M, ALARCON E

Graphene Transistor-Based Active Balun Architectures

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZIMMER T, FREGONESE S