国家/地区 France（3） Usa（3） Italy（2）
关键词 TRANSISTOR（9）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（9）
出版时间 2011（2）
机构
作者 HAPPY H（4） MENG N（2） PALLECCHI E（2） VIGNAUD D（2）
WEI W（2）

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

PACHECOSANCHEZ A, MAVREDAKIS N, FEIJOO PC, WEI W, PALLECCHI E, HAPPY H, JIMENEZ D

Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Characterization and Modeling of Graphene Transistor Low-Frequency Noise

IEEE TRANSACTIONS ON ELECTRON DEVICES

GRANDCHAMP B, FREGONESE S, MAJEK C, HAINAUT C, MANEUX C, MENG N, HAPPY H, ZIMMER T

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

IEEE TRANSACTIONS ON ELECTRON DEVICES

NAYFEH OM

Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

MENG N, FERNANDEZ JF, VIGNAUD D, DAMBRINE G, HAPPY H

Scalable Synthesis of Graphene on Patterned Ni and Transfer

IEEE TRANSACTIONS ON ELECTRON DEVICES

WANG YJ, MIAO CQ, HUANG BC, ZHU J, LIU W, PARK Y, XIE YH, WOO JCS

Theoretical Study of Ballistic Transport in Silicon Nanowire and Graphene Nanoribbon Field-Effect Transistors Using Empirical Pseudopotentials

IEEE TRANSACTIONS ON ELECTRON DEVICES

FANG JT, CHEN SM, VANDENBERGHE WG, FISCHETTI MV

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES

WEI W, ZHOU X, DEOKAR G, KIM H, BELHAJ MM, GALOPIN E, PALLECCHI E, VIGNAUD D, HAPPY H

Characterization and Modeling of Reduced-Graphene Oxide Ambipolar Thin-Film Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

LAGO N, BUONOMO M, HENSEL RC, SEDONA F, SAMBI M, CASALINI S, CESTER A