国家/地区 India（3）
关键词
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（3）
出版时间 2018（3）
机构
作者

Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime

IEEE TRANSACTIONS ON ELECTRON DEVICES

UPADHYAY AK, KUSHWAHA AK, RASTOGI P, CHAUHAN YS, VISHVAKARMA SK

Selective Reduction o Oxygen Functional Groups to Improve the Response Characteristics of Graphene Oxide-Based Formaldehyde Sensor Device: A First Principle Study

IEEE TRANSACTIONS ON ELECTRON DEVICES

MANNA B, RAHA H, CHAKRABARTI I, GUHA PK

Hole-Collecting Treated Graphene Layer and PTB7:PC71 BM-Based Bulk-Heterojunction OPV With Improved Carrier Collection and Photovoltaic Efficiency

IEEE TRANSACTIONS ON ELECTRON DEVICES

MAITY S, THOMAS T