国家/地区
关键词 GRAPHENE FET GFET（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（2）
出版时间 2016（2）
机构
作者

A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

IEEE TRANSACTIONS ON ELECTRON DEVICES

SATOU A, TAMAMUSHI G, SUGAWARA K, MITSUSHIO J, RYZHII V, OTSUJI T

Comments on "Optimization of a Compact I-V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration"

IEEE TRANSACTIONS ON ELECTRON DEVICES

FREGONESE S, ZIMMER T