国家/地区 Usa（7）
关键词 GRAPHENE（8）
出版物 IEEE TRANSACTIONS ON NUCLEAR SCIENCE（8）
出版时间 2012（3）
机构 VANDERBILT U.（4）
作者 FLEETWOOD DM（5） ZHANG EX（5） SCHRIMPF RD（4） ALLES ML（3）
CRESS CD（3） ZHANG CX（3） BOLOTIN KI（2） ESQUEDA IS（2）
LIAO WJ（2） NEWAZ AKM（2） PANTELIDES S.（2） REED RA（2）
WANG B（2） WELLER RA（2）

Monte Carlo Simulation of Displacement Damage in Graphene

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

LIAO WJ, ALLES ML, ZHANG EX, FLEETWOOD DM, REED RA, WELLER RA, SCHRIMPF RD

Total-Ionizing-Dose Effects on a Graphene X-Ray Detector Laser-Scribed From Graphene Oxide

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

DENG NQ, LIAO WJ, HU J, WANG P, XU MX, ZHANG HN, WANG P, LIANG CD, TIAN H, CHEN L, OUYANG XP, YANG Y, REN TL, ZHANG EX, FLEETWOOD DM

Effects of Proton and X-ray Irradiation on Graphene Field-Effect Transistors with Thin Gate Dielectrics

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

FRANCIS SA, PETROSKY JC, MCCLORY JW, CRESS CD

Surface Reactions and Defect Formation in Irradiated Graphene Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

PUZYREV YS, WANG B, ZHANG EX, ZHANG CX, NEWAZ AKM, BOLOTIN KI, FLEETWOOD DM, SCHRIMPF RD, PANTELIDES ST

Total Ionizing Dose Induced Charge Carrier Scattering in Graphene Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

CRESS CD, CHAMPLAIN JG, ESQUEDA IS, ROBINSON JT, FRIEDMAN AL, MCMORROW JJ

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG EX, NEWAZ AKM, WANG B, BHANDARU S, ZHANG CX, FLEETWOOD DM, BOLOTIN KI, PANTELIDES ST, ALLES ML, SCHRIMPF RD, WEISS SM, REED RA, WELLER RA

Modeling Radiation-Induced Scattering in Graphene

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ESQUEDA IS, CRESS CD