国家/地区 Japan（3）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（3）
出版时间 2016（3）
机构 TOHOKU UNIV（3）
作者 SUEMITSU M（3）

Solution-processed Al2O3 gate dielectrics for graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M

Graphene on C-terminated face of 4H-SiC observed by noncontact scanning nonlinear dielectric potentiometry

JAPANESE JOURNAL OF APPLIED PHYSICS

YAMASUE K, FUKIDOME H, TASHIMA K, SUEMITSU M, CHO Y

High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process

JAPANESE JOURNAL OF APPLIED PHYSICS

PARK GH, KIM KS, FUKIDOME H, SUEMITSU T, OTSUJI T, CHO WJ, SUEMITSU M