国家/地区 Russia（3）
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出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（3）
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Plasma assisted-MBE of GaN and AlN on graphene buffer layers

JAPANESE JOURNAL OF APPLIED PHYSICS

BORISENKO DP, GUSEV AS, KARGIN NI, KOMISSAROV IV, KOVALCHUK NG, LABUNOV VA

Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics

JAPANESE JOURNAL OF APPLIED PHYSICS

SVINTSOV D, VYURKOV V, RYZHII V, OTSUJI T

Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

ILLARIONOV YY, WALTL M, SMITH AD, VAZIRI S, OSTLING M, LEMME MC, GRASSER T