国家/地区 Germany（4）
关键词
出版物 JOURNAL OF APPLIED PHYSICS（4）
出版时间 2019（2）
机构 IHP LEIBNIZ .（2） TECH UNIV DR.（2）
作者 WENGER C（4）

Influence of temperature on growth of graphene on germanium

JOURNAL OF APPLIED PHYSICS

BECKER A, WENGER C, DABROWSKI J

Control of etch pit formation for epitaxial growth of graphene on germanium

JOURNAL OF APPLIED PHYSICS

BECKER A, WENGER C, DABROWSKI J

Demonstration of a graphene-base heterojunction transistor with saturated output current

JOURNAL OF APPLIED PHYSICS

STROBEL C, CHAVARIN CA, LESZCZYNSKA B, LESZCZYNSKI S, WINKLER F, KILLGE S, VOLKEL S, RICHTER K, HIESS A, KNAUT M, REIF J, ALBERT M, WENGER C, BARTHA JW

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

JOURNAL OF APPLIED PHYSICS

STROBEL C, CHAVARIN CA, KITZMANN J, LUPINA G, WENGER C, ALBERT M, BARTHA JW