国家/地区 Japan（7） China（3） Russia（2） Usa（2）
关键词 NANOMATERIAL（18）
出版物 JOURNAL OF CRYSTAL GROWTH（18）
出版时间 2014（3） 2018（3） 2020（3） 2021（3） 2015（2） 2017（2）
机构 MEIJO UNIV（3）
作者 MARUYAMA T（5） NARITSUKA S（5） UEDA Y（3） YAMADA J（3）
FUJIKAWA S（2） SASAKI T（2） TAKAHASI M（2）

X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer

JOURNAL OF CRYSTAL GROWTH

NARITSUKA S, YAMADA J, UEDA Y, NAKASHIMA A, KASHIO T, MARUYAMA T, FUJIKAWA S, SASAKI T, TAKAHASI M

Influence of nitridation on III-nitride films grown on graphene/quartz substrates by plasma-assisted molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

YU JD, HAO ZB, DENG J, YU WY, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT

Precipitation of multilayer graphene directly on gallium nitride template using Tungsten capping layer

JOURNAL OF CRYSTAL GROWTH

YAMADA J, UEDA Y, MARUYAMA T, NARITSUKA S

Electrocrystallization of supercooled water confined by graphene walls

JOURNAL OF CRYSTAL GROWTH

KHUSNUTDINOFF RM, MOKSHIN AV

Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

JOURNAL OF CRYSTAL GROWTH

LUNDIN WV, ZAVARIN EE, SAKHAROV AV, ZAKHEIM DA, DAVYDOV VY, SMIRNOV AN, ELISEYEV IA, YAGOVKINA MA, BRUNKOV PN, LUNDINA EY, MARKOV LK, TSATSULNIKOV AF

Insight and control of the chemical vapor deposition growth parameters and morphological characteristics of graphene/Mo2C heterostructures over liquid catalyst

JOURNAL OF CRYSTAL GROWTH

CHAITOGLOU S, TSIPAS P, SPELIOTIS T, KORDAS G, VAVOULIOTIS A, DIMOULAS A

Synthesis and characterization of graphene based thermoacoustic devices

JOURNAL OF CRYSTAL GROWTH

SBROCKEY NM, SALAGAJ T, TOMPA GS, KALKUR TS

Influence of a parallel electric field on the dispersion relation of graphene - A new route to Dirac logics

JOURNAL OF CRYSTAL GROWTH

KRUKOWSKI S, SOLTYS J, BORYSIUK J, PIECHOTA J

Ge cages at the SiC/graphene interface: A first principles calculation

JOURNAL OF CRYSTAL GROWTH

SIRIKUMARA HI, BOHORQUEZBALLEN J, JAYASEKERA T

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H-SiC (0001)

JOURNAL OF CRYSTAL GROWTH

GIANNAZZO F, DERETZIS I, NICOTRA G, FISICHELLA G, RAMASSE QM, SPINELLA C, ROCCAFORTE F, LA MAGNA A