国家/地区 China（6）
关键词 GRAPHENE（3） SEMICONDUCTING IIIV.（2）
出版物 JOURNAL OF CRYSTAL GROWTH（6）
出版时间 2020（6）
机构
作者

Van der Waals heterostructure of graphene and As2S3: Tuning the Schottky barrier height by vertical strain

JOURNAL OF CRYSTAL GROWTH

LIU XF, LV B, DING Z, LUO ZJ

Influence of nitridation on III-nitride films grown on graphene/quartz substrates by plasma-assisted molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH

YU JD, HAO ZB, DENG J, YU WY, WANG L, LUO Y, WANG J, SUN CZ, HAN YJ, XIONG B, LI HT

Effects of the oxide layer with different thicknesses on copper substrate on depressing graphene nucleation by low pressure chemical vapor deposition

JOURNAL OF CRYSTAL GROWTH

SHI YG, WANG YW, REN Y, SANG ZJ

Origin of microstructural defects in single-crystalline films van der Waals epitaxy on graphene

JOURNAL OF CRYSTAL GROWTH

LIU Y, XU Y, CAO B, LI ZY, ZHAO E, YANG S, WANG CH, WANG JF, XU K

Atomic insight into the solidification of Cu melt confined in graphene nanoslits

JOURNAL OF CRYSTAL GROWTH

FANG RR, WANG W, GUO LJ, ZHANG K, ZHANG XH, LI H

Synthesis of graphene-like carbon film on SiC substrate

JOURNAL OF CRYSTAL GROWTH

WANG Y, GU PF, ZHAO ZF, ZHOU P, LI ZH, LI Y