国家/地区 Germany（11）
关键词 EPITAXIAL GRAPHENE（2） GRAPHENE（2） SURFACE ACOUSTIC WA.（2）
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（11）
出版时间 2014（3） 2010（2） 2017（2）
机构 MAX PLANCK I.（2） UNIV ERLANGE.（2）
作者 SEYLLER T（3） FROMM F（2） HERNANDEZMIN.（2） LIOU YT（2）
SANTOS PV（2） SPECK F（2） STARKE U（2）

Interaction of surface acoustic waves with electronic excitations in graphene

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HERNANDEZMINGUEZ A, LIOU YT, SANTOS PV

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WEHRFRITZ P, FROMM F, MALZER S, SEYLLER T

Deuterium adsorption on (and desorption from) SiC(0001)-(3 x 3), (root 3 x root 3) R30 degrees, (6 root 3 x 6 root 3) R30 degrees and quasi-free-standing graphene obtained by hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

BOCQUET FC, BISSON R, THEMLIN JM, LAYET JM, ANGOT T

Epitaxial graphene on SiC: from carrier density engineering to quasi-free standing graphene by atomic intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

FORTI S, STARKE U

Implanted bottom gate for epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WALDMANN D, JOBST J, FROMM F, SPECK F, SEYLLER T, KRIEGER M, WEBER HB

Graphene-based sample supports for in situ high-resolution TEM electrical investigations

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WESTENFELDER B, MEYER JC, BISKUPEK J, ALGARASILLER G, LECHNER LG, KUSTERER J, KAISER U, KRILL CE, KOHN E, SCHOLZ F

Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RIEDL C, COLETTI C, STARKE U

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T

Acousto-electric transport in MgO/ZnO-covered graphene on SiC

JOURNAL OF PHYSICS DAPPLIED PHYSICS

LIOU YT, HERNANDEZMINGUEZ A, HERFORT J, LOPES JMJ, TAHRAOUI A, SANTOS PV

Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6 '' wafer process line

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SCHALL D, PORSCHATIS C, OTTO M, NEUMAIER D