国家/地区 Usa（8）
关键词
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（8）
出版时间 2012（8）
机构 GEORGIA INST.（6）
作者 BERGER C（2） DE HEER WA（2）

Diffusion of Si and C atoms on and between graphene layers

JOURNAL OF PHYSICS DAPPLIED PHYSICS

XIAN LD, CHOU MY

Advances in the chemical modification of epitaxial graphene

JOURNAL OF PHYSICS DAPPLIED PHYSICS

BEKYAROVA E, SARKAR S, NIYOGI S, ITKIS ME, HADDON RC

Epitaxial graphene

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DE HEER WA, BERGER C

The structure of graphene grown on the SiC (000(1)over-bar) surface

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HICKS J, SHEPPERD K, WANG F, CONRAD EH

Structured epitaxial graphene: growth and properties

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HU YK, RUAN M, GUO ZL, DONG R, PALMER J, HANKINSON J, BERGER C, DE HEER WA

Effective theory of rotationally faulted multilayer graphene-the local limit

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KINDERMANN M, FIRST PN

Model and simulations of the epitaxial growth of graphene on non-planar 6H-SiC surfaces

JOURNAL OF PHYSICS DAPPLIED PHYSICS

MING F, ZANGWILL A

Graphene formed on SiC under various environments: comparison of Si-face and C-face

JOURNAL OF PHYSICS DAPPLIED PHYSICS

SRIVASTAVA N, HE GW, LUXMI, MENDE PC, FEENSTRA RM, SUN YG