国家/地区 Germany（3）
关键词
出版物 JOURNAL OF PHYSICS DAPPLIED PHYSICS（3）
出版时间 2014（3）
机构
作者

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WEHRFRITZ P, FROMM F, MALZER S, SEYLLER T

Deuterium adsorption on (and desorption from) SiC(0001)-(3 x 3), (root 3 x root 3) R30 degrees, (6 root 3 x 6 root 3) R30 degrees and quasi-free-standing graphene obtained by hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

BOCQUET FC, BISSON R, THEMLIN JM, LAYET JM, ANGOT T

Epitaxial graphene on SiC: from carrier density engineering to quasi-free standing graphene by atomic intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

FORTI S, STARKE U