国家/地区 Malaysia（5）
关键词
出版物 MICROELECTRONICS RELIABILITY（5）
出版时间 2014（2）
机构 UNIV SAINS M.（4）
作者 NADI M（4） GHADIRY M（3） KARIMI H（3） AHMADI MT（2）
MANAF AABD（2） RAHMANI M（2） SADEGHI H（2）

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors (vol 53, pg 540, 2013)

MICROELECTRONICS RELIABILITY

GHADIRY M, NADI M, BAHADORAN M, MANAF AABD, KARIMI H, SADEGHI H

Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

MICROELECTRONICS RELIABILITY

SAEIDMANESH M, RAHMANI M, KARIMI H, KHALEDIAN M, ISMAIL R

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

MICROELECTRONICS RELIABILITY

GHADIRY M, NADI M, BAHADORIAN M, MANAF AABD, KARIMI H, SADEGHI H

Ionization coefficient of monolayer graphene nanoribbon

MICROELECTRONICS RELIABILITY

GHADIRY M, BIN ABD MANAF A, NADI M, RAHMANI M, AHMADI MT

A model for length of saturation velocity region in double-gate Graphene nanoribbon transistors

MICROELECTRONICS RELIABILITY

GHADIRY MH, NADI M, AHMADI MT, ABD MANAF A