国家/地区 Usa（2）
关键词 HEXAGONAL BORON NITRIDE（5）
出版物 NANO LETTERS（5）
出版时间
机构
作者 WATANABE K（5）

Carbon-Rich Domain in Hexagonal Boron Nitride: Carrier Mobility Degradation and Anomalous Bending of the Landau Fan Diagram in Adjacent Graphene

NANO LETTERS

ONODERA M, WATANABE K, ISAYAMA M, ARAI M, MASUBUCHI S, MORIYA R, TANIGUCHI T, MACHIDA T

Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices

NANO LETTERS

GOOSSENS AM, DRIESSEN SCM, BAART TA, WATANABE K, TANIGUCHI T, VANDERSYPEN LMK

Direct Probing of the Electronic Structures of Single-Layer and Bilayer Graphene with a Hexagonal Boron Nitride Tunneling Barrier

NANO LETTERS

JUNG S, MYOUNG N, PARK J, JEONG TY, KIM H, WATANABE K, TANIGUCHI T, HA DH, HWANG C, PARK HC

Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal-Hexagonal Boron Nitride-Graphene Junctions

NANO LETTERS

CHANDNI U, WATANABE K, TANIGUCHI T, EISENSTEIN JP

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

NANO LETTERS

FALLAHAZAD B, LEE K, KANG S, XUE JM, LARENTIS S, CORBET C, KIM K, MOVVA HCP, TANIGUCHI T, WATANABE K, REGISTER LF, BANERJEE SK, TUTUC E