国家/地区 China（4）
关键词 SCHOTTKY BARRIER（7）
出版物 NANOTECHNOLOGY（7）
出版时间 2019（2） 2020（2）
机构 HENAN NORMAL.（3）
作者 LI HH（2） WANG HY（2） ZHOU ZP（2）

Tunable Schottky barrier in InTe/graphene van der Waals heterostructure

NANOTECHNOLOGY

LI HH, ZHOU ZP, WANG HY

Electronic properties of graphene-ZnO interface: a density functional theory investigation

NANOTECHNOLOGY

FATHZADEH M, FAHRVANDI H, NADIMI E

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

NANOTECHNOLOGY

LI HH, ZHOU ZP, ZHANG KL, WANG HY

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

NANOTECHNOLOGY

GIANNAZZO F, SHTEPLIUK I, IVANOV G, IAKIMOV T, KAKANAKOVAGEORGIEVA A, SCHILIRO E, FIORENZA P, YAKIMOVA R

PtSe2/graphene hetero-multilayer: gate-tunable Schottky barrier height and contact type

NANOTECHNOLOGY

XIA CX, DU J, FANG LZ, LI XP, ZHAO X, SONG XH, WANG TX, LI JB

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

NANOTECHNOLOGY

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L

Tunable Schottky barrier in Janus-XGa2 Y/Graphene (X/Y = S, Se, Te; X not equal Y) van der Waals heterostructures

NANOTECHNOLOGY

GUO H, LANG XF, TIAN XB, JIANG WT, WANG GZ