国家/地区 Japan（2） Usa（2）
关键词 EPITAXIAL LAYER（5）
出版物 PHYSICAL REVIEW B（5）
出版时间 2009（5）
机构 NTT CORP（2）
作者 HIBINO H（2） KAGESHIMA H（2）

Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate

PHYSICAL REVIEW B

SIEGEL DA, ZHOU SY, EL GABALY F, SCHMID AK, MCCARTY KF, LANZARA A

Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

PHYSICAL REVIEW B

SONDE S, GIANNAZZO F, RAINERI V, YAKIMOVA R, HUNTZINGER JR, TIBERJ A, CAMASSEL J

Graphene on Pt(111): Growth and substrate interaction

PHYSICAL REVIEW B

SUTTER P, SADOWSKI JT, SUTTER E

Stacking domains of epitaxial few-layer graphene on SiC(0001)

PHYSICAL REVIEW B

HIBINO H, MIZUNO S, KAGESHIMA H, NAGASE M, YAMAGUCHI H

Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy

PHYSICAL REVIEW B

HIBINO H, KAGESHIMA H, KOTSUGI M, MAEDA F, GUO FZ, WATANABE Y