国家/地区 France（8）
关键词 GRAPHENE（2）
出版物 SEMICONDUCTOR SCIENCE TECHNOLOGY（8）
出版时间 2010（2）
机构 UNIV PARIS 1.（4）
作者 DOLLFUS P（4） NGUYEN VH（3） TRAN VT（2）

Tight-binding description for the electronic band structure of penta-graphene

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN TKQ, VU TT, TRAN VT

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Gate-controllable negative differential conductance in graphene tunneling transistors

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN VH, NIQUET YM, DOLLFUS P

Resonant tunneling structures based on epitaxial graphene on SiC

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN VH, BOURNEL A, DOLLFUS P

Dirac electronic states in graphene systems: optical spectroscopy studies

SEMICONDUCTOR SCIENCE TECHNOLOGY

ORLITA M, POTEMSKI M

The magnetic field particle-hole excitation spectrum in doped graphene and in a standard two-dimensional electron gas

SEMICONDUCTOR SCIENCE TECHNOLOGY

ROLDAN R, GOERBIG MO, FUCHS JN

Monte Carlo study of electron relaxation in graphene with spin polarized, degenerate electron gas in presence of electron-electron scattering

SEMICONDUCTOR SCIENCE TECHNOLOGY

BOROWIK P, THOBEL JL, ADAMOWICZ L

Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructures

SEMICONDUCTOR SCIENCE TECHNOLOGY

TRAN VT, SAINTMARTIN J, DOLLFUS P