国家/地区 Russia（15）
关键词
出版物 SEMICONDUCTORS（15）
出版时间 2012（3） 2015（3） 2016（3） 2011（2） 2017（2）
机构 RUSSIAN ACAD SCI（15）
作者 DAVYDOV SY（15）

Energy gaps in the density of states of a graphene buffer layer on silicon carbide: Consideration for the irregularity of layer-substrate coupling

SEMICONDUCTORS

DAVYDOV SY

On the specific features of the density of states of epitaxial graphene formed on metal and semiconductor substrates

SEMICONDUCTORS

DAVYDOV SY

On the effect of the spontaneous polarization of a SiC substrate on a buffer layer and quasi-free single-sheet graphene

SEMICONDUCTORS

DAVYDOV SY

A problem on a dimer adsorbed at single-sheet graphene

SEMICONDUCTORS

DAVYDOV SY

Adsorption-Induced Energy Gap in the Density of States of Single-Sheet Graphene

SEMICONDUCTORS

DAVYDOV SY

Electronic states in epitaxial graphene fabricated on silicon carbide

SEMICONDUCTORS

DAVYDOV SY

On Charge Transfer in the Adsorbed Molecules-Graphene Monolayer-SiC Substrate System

SEMICONDUCTORS

DAVYDOV SY

Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate

SEMICONDUCTORS

DAVYDOV SY

On the theory of adsorption on graphene-like compounds

SEMICONDUCTORS

DAVYDOV SY

Substitutional impurity in single-layer graphene: The Koster-Slater and Anderson models

SEMICONDUCTORS

DAVYDOV SY