国家/地区 India（2）
关键词 BANDTOBAND TUNNELING B2B（2）
出版物 SILICON（2）
出版时间
机构
作者 PAITYA N（2）

InAs/Si Hetero-Junction Channel to Enhance the Performance of DG-TFET with Graphene Nanoribbon: an Analytical Model

SILICON

DUTTA R, SUBASH TD, PAITYA N

Electric Field and Surface Potential Analytical Modeling of Novel Double Gate Triple Material PiN Tunneling Graphene Nano Ribbon FET (DG-TM-PiN-TGNFET)

SILICON

DUTTA R, PAITYA N, SUBASH TD