国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人
公开年 2012（2）
申请年 2012（2）
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（2）

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S