国家/地区 美国（3） 韩国（2）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） B01J（2） C01B（2）
IPC C23C016/26（3）
发明人
公开年 2015（2）
申请年 2015（3）
专利权人

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Processing method for making graphene spin filter device by chemical vapor deposition (CVD) involves growing graphene film on first crystalline ferromagnetic metal surface and then depositing second ferromagnetic film on graphene film.

COBAS E, FRIEDMAN A L, JONKER B T, VAN T ERVE O M T

Manufacture of graphene involves irradiating near-infrared ray to chamber containing metallic catalyst and carbon source, reacting metallic catalyst and carbon source, and growing graphene on surface of metallic catalyst.

HONG B H, HAN J H, HAN D H, CHOI W T, KIM J D