国家/地区 美国（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC
发明人
公开年 2021（2）
申请年 2021（2）
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Radiating table designed with special water channel of alloy material, has heat dissipation pipe fitting to water pipe through groove, heat dissipation platform provided with several waterway annular grooves communicated with water pipe through groove.

ZHAO J, HU C, HU C Q, ZHAO J H