国家/地区 日本（3）
IPC部 C（3）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3）
IPC C01B032/184（2） C01B032/198（2）
发明人 JIE T（2） KUN Z（2） LIN S Q（2）
SHIQI L（2） TANG J（2） ZHANG K（2）
公开年 2023（3）
申请年 2022（3）
专利权人 MATERIALS IN.（2） NAT MATERIAL.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Producing graphene material used in graphene electrode for electric double layer capacitor, by preparing graphene oxide, heat-treating graphene oxide, dispersing heat-treated graphene oxide in dispersion medium, and hydrothermally treating thermally reduced graphene oxide dispersion.

JIE T, SHIQI L, KUN Z, YUKINORI H, YORISHIGE M, TANG J, LIN S Q, ZHANG K, HATO Y, MATSUBA Y

Graphene electrode does not contain a conductive material and binder used in electricity storage device such as electric double layer capacitor and lithium ion batteries, consists essentially of graphene.

JIE T, WANLI Z, SHIQI L, KUN Z, TANG J, ZHANG W L, LIN S Q, ZHANG K