国家/地区 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人
公开年
申请年 2020（2）
专利权人 APPLIED MATERIALS INC（2）

Forming airgap in semiconductor structure is used to produce high quality devices and structures, involves forming high-k material on floor of trench, trench occurs on semiconductor substrate between sidewalls of first material and spacer material, forming gate structure on high-k material.

SACHID A B

Forming opening using mask involves forming mask on feature layer, forming first opening in mask to expose portion of feature layer, forming carbon layer on mask and removing portions of carbon layer and exposed portion of feature layer.

LING M, KWON T, KIM J M, YING C C