国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 DING G（2） XIE X（2）
公开年 2012（2）
申请年 2012（2）
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEMS（2）

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X