国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 DUAN X（2）
公开年 2016（2）
申请年 2014（2）
专利权人 DUAN X（2）

Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide, and then providing obtained single crystal silicon carbide with electron beam bombardment and laser irradiation.

DUAN X

Single crystal graphene coil, has substrate provided with winding form part, and graphite crystal structure provided with super-conductive single crystal grapheme wire, where graphite crystal structure is arranged with winding film.

DUAN X