国家/地区 韩国（2）
IPC部 C（2） H（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年 2015（2）
申请年
专利权人 ELECTRONICS TELECOM RES INST（2）

Method for growing single-layer graphene used for graphene device, involves forming silicon oxide layer, forming multilayer catalyst layer having nickel and copper layers with preset thickness ratio, and growing single-layer graphene.

CHOI J S, CHOI H K, KIM K C, YU Y J, KIM J S, CHOI C G

Manufacturing graphene-ionic liquid composites for electrode materials of supercapacitors, by dispersing graphite oxide composites and ionic liquid-composites into solvent, adding sodium borohydride, and then applying thermal energy.

KANG K, KIM J, KIM K M, KIM S, LEE Y G, SHIN D O