国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 LIANG S（2）
公开年 2013（2）
申请年 2013（2）
专利权人 HARBIN INST TECHNOLOGY（2）

Preparing single crystal graphene, by depositing metallic film on mica substrate, vacuumizing deposited film, introducing hydrogen gas and argon, raising temperature, and continuously introducing methane gas with hydrogen gas and argon.

LIANG S, CAO J, FENG J, QI J, ZHANG L

Preparing low-temperature coordination assembling-synthesizing graphene comprises e.g. adding metal substrate in plasma-enhanced chemical vapor deposition device, vacuumizing, introducing e.g. argon gas, depositing, and growing graphene.

CAO J, FENG J, LIANG S, QI J, ZHANG L