国家/地区 印度（2）
IPC部
IPC大类
IPC小类
IPC
发明人 BID A（2）
公开年
申请年
专利权人 INDIAN INST SCI（2）

Sensor device for measuring pressure and strain, has crumpled reduced graphene oxide (rGO) that is deposited between metal contacts on substrate.

KUNDU S, RAMMOHAN S, AMIN K R, BID A, RUDRA P, RAVISHANKAR N

Field effect transistor for sensing vapors and/or gases comprises substrate, graphene layer on substrate, source and drain electrodes in contact with graphene layer, and gate electrode capacitively coupled to graphene layer.

BID A, AMIN K R