国家/地区 中国（2） 德国（2） 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L029/06（2） H01L029/16（2）
发明人
公开年
申请年 2012（2）
专利权人 INFINEON TECHNOLOGIES AG（2）

Manufacture of sensor component involves forming graphene layer on substrate, depositing plastic material on graphene layer, in order to cover at least partially graphene layer, and separating substrate into two portions.

ELIAN K, RUHL G, THEUSS H, ESCHERPOEPPEL I, LUHEER G, THEUS H, ERIAN C

Vertical power semiconductor device e.g. insulated gate bipolar transistor (IGBT), has current path that is arranged between upper and lower contacts and is provided with graphene layer.

SCHULZE H, RUPP R, SCHULTZE H, RUP R