国家/地区 美国（7）
IPC部 B（4） C（4） G（2）
H（2）
IPC大类 B82（4） C01（4） B01（2）
H01（2）
IPC小类 C01B（4） B82B（3） B01J（2）
B82Y（2） H01L（2）
IPC C01B031/02（4） B82B003/00（3） C01B031/04（3）
B01J019/12（2） H01L029/78（2）
发明人 CHO B J（2） KIM H（2） KIM H J（2）
OH I（2） OH I K（2）
公开年 2012（3） 2013（3）
申请年 2012（7）
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（7）

Hierarchical structure of graphene-carbon nanotubes is obtained by growing graphene into carbon nanotubes having hierarchical structure by adding metal nanoparticles on graphene, and is metal-functionalized by metal precursor.

BAE S, KIM H, OH I, BAE S H, KIM H J, OH I K

Visualizing optical domains of graphene, by forming graphene layer, forming liquid crystal layer on graphene layer, and measuring optical properties of formed liquid crystal layer to visualize domains and domain boundaries of graphene.

JUNG H T, KIM Y H, KIM D W, JEONG H S

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J

Graphene-ceramic nanocomposite powder for electronic device, nozzle of ignition system, substrate, condenser, sensor and integrated circuit, contains matrix ceramics and graphene dispersed in matrix ceramics.

HONG S, KOO M Y, HWANG J, LEE B

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Floating gate- or charge trap-type non-volatile memory device includes gate electrode made of graphene.

CHO B J, PARK J K

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S