国家/地区 韩国（4）
IPC部 B（4） C（4）
IPC大类 B01（4） C01（4）
IPC小类 B01J（4） C01B（4）
IPC B01J019/08（4）
发明人 CHOI I S（3） CHOI M H（3） LEE H S（3）
LEE K J（3） PARK D Y（3） PARK J H（2）
公开年 2016（4）
申请年 2015（4）
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（4）

Apparatus for manufacturing graphene, comprises reaction chamber for providing internal space in which graphene growth plate is accommodated.

CHOI I S, CHOI M H, LEE H S, LEE K J, PARK D Y, PARK J H

Manufacture of graphene involves supplying carbon source having carbon-carbon triple bond(s) into chamber having substrate, and irradiating light from flash lamp to carbon source such that graphene is formed on substrate.

CHOI I S, CHOI M H, LEE H E, LEE H S, LEE K J, PARK D Y

Producing graphene, comprises coating a solid carbon source material on a catalytic metal, irradiating the solid carbon source material with light, and forming graphene from the solid carbon source material on the catalytic metal.

CHOI I S, CHOI M H, LEE H S, LEE K J, PARK D Y, PARK J H

Locally reducing graphene oxide useful for electronic devices and semiconductor material, comprises e.g. preparing a graphene oxide thin film, and forming a self-reactive layer on upper surface of the graphene oxide thin film.

HO J R, SE G B, SEOUNG W K, SEUNG S K, WOO J L