国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人
公开年
申请年
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（2）

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Graphene/metal nanocomposite powder used in nanocomposite material comprises graphenes acting as reinforcing material for base metal, where graphenes are interposed as thin film between metal particles of base metal and bonded to particles.

HONG S H, HWANG J W, LIM B K, JIN S H, HWANG J, HONG S, SEONG J, HONG C, LIM B