国家/地区 韩国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 CHOI S Y（2）
公开年
申请年
专利权人 KOREA ADVANCED SCI TECHNOLOGY INST（2）

Soft memristor for soft neuromorphic system has metal diffusion barrier layer formed on first electrode layer, and resistive switching material layer formed on metal diffusion barrier layer.

CHA J H, JANG B C, CHOI S, CHOI S Y, CHANG B C, JUNHWE C

Making doped graphene thin film with mesoporous structure using flash lamp involves coating mixture solution of doping element source-having material with doping element and graphene oxide on substrate and irradiating light to the solution.

CHOI S, CHA J, KIM I, CHOI S Y, JUNHWE C, DOO K, KIM D H