国家/地区 韩国（4）
IPC部 C（5） H（2）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/04（5）
发明人 LEE D S（2）
公开年 2016（5）
申请年 2015（5）
专利权人 KOREA INST SCI TECHNOLOGY（5）

Producing reduced graphene oxide sheet useful in film t electromagnetic shielding, comprises e.g. preparing graphite oxide by mixing graphite powder and solution containing e.g. strong acid, oxidizing and producing graphene oxide.

KOO C M, HWANG S S, HONG S M, BAEK K Y, KUMAR P, KIM Y H, YANG S J

Non-volatile memory device consists of substrate, lower electrode, active layer containing metal oxide-graphene quantum dots and organic polymer material, and upper electrode, in order.

KIM T W, SON D I, BAE S, LEE S H, MOON B J, LEE D S, PARK M

Manufacture of three-dimensional graphene used for manufacturing of reduced graphene, involves providing core-shell composite in which core is surrounded by graphene or graphene derivative as shell material, and etching.

GON S J, LEE S S, JANG Y L, KIM H, JONG H P, BAE W K

Producing graphene by continuous roll-to-roll method, comprises e.g. sealing a reaction chamber using liquid phase precursor having carbon and carbon source to partitioning internal and external environments, and supplying metal catalyst.

KIM M J, CHO H J, LEE D S

AA' stacked graphite used as e.g. electrode material comprises graphene stacked the sequence of AA' in which alternate graphene layers exhibiting AA' stacking are horizontally translated by half hexagon from zigzag AA stacking of graphene.

LEE J, LEE S, AHN J, LEE W