国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 LIU Q（2）
公开年
申请年
专利权人 LIU Q（2）

Method for manufacturing semiconductor device, involves forming grid medium layer between graphene-containing layer and exposed seed layer using photo resist as mask and forming gate metal on gate dielectric medium to remove photo-resist.

WEI C, LI J, LIU Q, FENG Z, WANG J, HE Z

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X