国家/地区 世界知识产权组织（2）
IPC部
IPC大类
IPC小类
IPC
发明人
公开年 2019（2）
申请年 2019（2） 
专利权人 MASSACHUSETTS INST TECHNOLOGY（2）

Method for growing silicon carbide layer used in electronic/photonic device, involves forming silicon carbide film on layer comprising graphene and/or hexagonal boron nitride, formed on substrate, in presence of inert gas-based material.

MYERSWARD R L, KIM J, QIAO K, KONG W, GASKILL D K, MAEKAWA T, MASAGO N

Composition comprises discrete nanostructures of functionalized graphene layer and core species bound to the graphene layer and core species reversibly covalently binds first portion of the layer to a second portion of the graphene layer.

HUNTER I W, SWAGER T M, JEON I, PARK G H, WANG P