国家/地区 韩国（5）
IPC部 G（3） B（2） C（2）
IPC大类 G01（3） C01（2）
IPC小类 G01N（3） C01B（2）
IPC G01N027/414（3） C01B032/194（2） G01N027/30（2）
发明人 CHO S M（5） CHO M（4） CHO M G（4）
OH H G（4） OHHONGGI（4） KIM K S（3）
SONG K S（2）
公开年 2022（2） 2023（2）
申请年 2021（3）  2020（2） 
专利权人 MCK TECH CO LTD（5）

Manufacturing graphene composite structure by forming support body having observation unit corresponding to observation area and frame unit, and forming hydrophilic protective layer on upper surface of graphene layer by applying energy to graphene layer onto which organic component is transferred.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Wrinkle flattening unit for flattening wrinkles present in graphene composite structure, has rotation portion that comprises outer rotation unit having multiple suction holes communicating with branch passage and supporting one surface of composite structure.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Method for manufacturing ion detection sensor, involves applying ion-sensitive mixed layer preparation solution so as to cover portion of upper portion of source electrode and drain electrode to provide ion-sensitive mixed layer that responds to target ions.

CHO S M, CHO M G, KIM K S, OH H G, CHO M, OHHONGGI

Reference electrode for ion measurement sensor, has graphene containing fluorine functional group treated with fluorine-benzene, and graphene is non-oxidized graphene or reduced graphene oxide.

CHO S M, CHO M G, KIM K S, OH H G, SONG K S, JO D A, CHO H S, CHO M, OHHONGGI, DAAE J, HAESHIN J

Two-dimensional structure sensor for an ion sensitive field-effect transistor, includes transistor that is formed with a substrate, which is formed with a source region and a drain region, where reference electrode is formed with graphene.

SONG K S, CHO S M, KIM K S