国家/地区 中国（5）
IPC部 H（3）
IPC大类 H01（3）
IPC小类
IPC
发明人
公开年 2015（5）
申请年 2015（5）
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（5）

Graphene site effect transistor, has insulation layer placed between graphene layer and source leakage electrode layer and formed in active region area, and top gate electrode fixed across source electrode and leakage electrode.

CHU W, DONG F, XU L, YAN L, ZHAO M

Preparation of patterned graphene used for flexible electrode, field effect transistor, sensor part or display device, by forming graphite sheet target pattern into copper foil surface, heating, and growing.

DU M, FANG Y, LI L, LI X

Method for preparing graphene oxide/silver nanowire composite transparent conductive film, involves providing substrate, coating substrate with silver nano wire, followed by coating conductive layer with graphene oxide.

LI W, ZHANG Z, ZHANG H, DUAN F

Preparing noble metal nanostructures for use in biomedical applications, involves placing noble metal sheet into nano graphene oxide solution.

WANG X, WANG C, YANG L, YANG R, HAN Q

Method for preparing semi-transparent flexible electrode material that is utilized for solar energy battery, involves utilizing nickel hydroxide deposited conductive foam adsorption graphene.

JIANG P, WANG Y