国家/地区 美国（2）
IPC部 C（3） H（3） B（2）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3）
IPC C01B032/194（2）
发明人
公开年 2020（2） 2021（2）
申请年 2019（4）
专利权人 NAT CHUNGSHAN INST SCI TECHNOLOGY（4）

Chemical synthesis method to fabricate boron carbide powders, comprises e.g. formulating precursor solution comprising boron source, liquid organic carbon source and catalyst.

HSU W, CHEN Y, WANG H, HUANG K

Nitride transistor structure, has barrier layer arranged on channel layer, metal electrode module arranged on barrier layer, and gate arranged between source and drain, where carbon doping concentration of channel layer is greater than specific value.

LIN J C, KE W C, CHANG Y C, CHIANG C Y, CHANG K J, CHEN C T, LIU G S

Supercapacitor comprises working electrode formed with activated material with nitrogen-doping porous graphene, counter electrode formed with another activated material with nitrogen-doping porous graphene and separator.

CHANG C, HUNG W, CHANG J, PAN B

Anode material for anode electrode, has multilayer graphene as carrier, nano-silicon as core adsorbed on multilayer graphene, silicon suboxide and amorphous carbon layer coated on multilayer graphene and on nanosilicon, and buffering holes.

LEE P, WENG B, GEE C, CHEN B, LI B, GE C